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Dr Nurul Fadzlin Hasbullah

KULLIYYAH OF ENGINEERING

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  1. Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
  2. Benkara, Souaad and Mahmud, Manzar and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2016) Radiation characteristics and SEU rates in NEqO environment using SPENVIS. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  3. Badawi, Ahmed S.A. and Hasbullaha, Nurul Fadzlin and Yusoff, Siti Hajar and Hassan Abdalla Hashim, Aisha (2019) Energy and power estimation for three different locations in Palestine. Indonesian Journal of Electrical Engineering and Computer Science, 14 (3). pp. 1049-1056. ISSN 2502-4752
  4. Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.
  5. Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished)
  6. Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)
  7. Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering. pp. 1-10. ISSN 1448-837X E-ISSN 2205-362X (In Press)
  8. Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,
  9. Abd-alla, Abo-el-nour N. and Othman, Mohamed I.A and Hasbullah, Nurul Fadzlin (2019) Shear horizontal waves in composite materials: behavior under rotation and initial stress. Mathematics and Mechanics of Solids, 24 (1). pp. 85-97. ISSN 1081-2865 E-ISSN 1741-3028
  10. Idris, N. F. and Lokman, Muhammad Quisar and Harun, Sulaiman Wadi and Rahim, H. R.A. and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2018) Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber. Journal of Telecommunication, Electronic and Computer Engineering, 10 (2-7). pp. 73-77. ISSN 2180-1843 E-ISSN 2289-8131
  11. Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826
  12. Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760
  13. Abd-alla, Abo el nour N and Hasbullah, Nurul Fadzlin and Hossen, Hala M. (2016) The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress. Journal of Computational and Theoretical Nanoscience, 13 (10). pp. 6475-6481. ISSN 1546-1955
  14. Hedzir, Anati Syahirah and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2016) A review of leakage current mechanism in nitride based light emitting diode. Malaysian Journal of Fundamental and Applied Sciences, 12 (2). pp. 77-84. ISSN 2289-5981 E-ISSN 2289-599X
  15. Ahamad Sukor, Masturah and Hasbullah, Nurul Fadzlin and Ibrahim, Siti Noorjannah (2016) Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.
  16. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Abdullah, Yusof and Muridan, Norasmahan (2016) Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  17. Hedzir, Anati Syahirah and Muridan, Norasmahan and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2016) Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.
  18. Abubakkar, Sheik Fareed Ookar and Hasbullah, Nurul Fadzlin and Zabah, Nor Farahidah and Abdullah, Yusof (2014) 3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs. In: 5th International Conference on Computer and Communication Engineering (ICCCE 2014), 23-25 Sep 2014, Kuala Lumpur.
  19. Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and ., Md. Rashid and Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Mohamed Zin, muhammad Rawi (2013) Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures. In: 2013 IEEE 4th International Conference on Photonics (ICP), 28th-30th Oct. 2013, Equatorial Hotel, Melaka.
  20. Elwadeya, Mohamed Youssef Khalaf and Al-Khateeb, Khalid A. Saeed and Hasbullah, Nurul Fadzlin (2014) Simplified channel authentication algorithm for secure quantum key distribution. In: 5th International Conference on Computer and Communication Engineering (ICCCE 2014), 23-25 Sep 2014, Kuala Lumpur.

Most Viewed Items

Item titleViews
1Electroluminescence studies of modulation p-doped quantum dot laser structures1346
2Effect of modulation p-doping on the optical properties of quantum dot laser structure1268
3Quantum dots as a solution to radiation hardness1267
4p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency1258
5Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures1205
6Effects of neutron irradiation on various electronic devices1162
7Reverse leakage current mechanisms in quantum dot laser structures1151
8Capacitance-voltage fitting algorithm for doping profile characterisation of Mesa Diodes using MATLAB1143
9Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes1083
10Cooling techniques for single photon avalanche diode1034
11Neutron source and neutron shielding1014
12Electrical properties of neutron-irradiated silicon and GaAs commercial diodes 971
13Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation955
14Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation847
153MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs812
16Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor754
17Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures741
18Simplified channel authentication algorithm for secure quantum key distribution713
19Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures701
20The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress590
21Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation560
22A review of leakage current mechanism in nitride based light emitting diode498
23Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass494
24The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode365
25Electrical characterization of commercial power MOSFET under electron radiation358
26Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber275
27Shear horizontal waves in composite materials: behavior under rotation and initial stress232
28Energy and power estimation for three different locations in Palestine227
29Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation199
30Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature181