IIUM Repository

Dr Nurul Fadzlin Hasbullah

KULLIYYAH OF ENGINEERING

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  1. Baba, Tamana and Javed, Yasir and Iqbal Khan, Zafar and Ali, Turab and Hasbullah, Nurul Fadzlin (2024) Investigation of proton radiation effect on indium gallium nitride light emitting diodes. Periodica Polytechnica Electrical Engineering and Computer Science, 68 (3). pp. 223-231. ISSN 2064-5260 E-ISSN 2064-5279
  2. Baba, Tamana and Siddiqui, Naseeb Ahmed and Saidin, Norazlina and Md Yusoff, Siti Harwani and Abdul Sani, Siti Fairus and Abdul Karim, Julia and Hasbullah, Nurul Fadzlin (2024) Radiation-induced degradation of silicon carbide MOSFETs – a review. Materials Science & Engineering: B, 300. pp. 1-13. ISSN 0921-5107 E-ISSN 1873-4944
  3. Baba, Tamana and Husni, Muhammad Hazeeq and Saidin, Norazlina and Hasbullah, Nurul Fadzlin (2024) Effect of proton radiation on gallium nitride light emitting diodes. Bulletin of Electrical Engineering and Informatics, 13 (1). pp. 194-201. ISSN 2089-3191 E-ISSN 2302-9285
  4. Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2023) Degradation of InGaN LEDs by proton radiation. In: 8th International Conference on Business and Industrial Research (ICBIR 2023), 18th - 19th May 2023, Bangkok, Thailand.
  5. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin (2021) A review of high ideality factor in gallium nitride-based light-emitting diode. Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (1). pp. 83-89. ISSN 1560-8034 E-ISSN 1605-6582
  6. Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
  7. Benkara, Souaad and Mahmud, Manzar and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2016) Radiation characteristics and SEU rates in NEqO environment using SPENVIS. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  8. Badawi, Ahmed S.A. and Hasbullaha, Nurul Fadzlin and Yusoff, Siti Hajar and Hassan Abdalla Hashim, Aisha (2019) Energy and power estimation for three different locations in Palestine. Indonesian Journal of Electrical Engineering and Computer Science, 14 (3). pp. 1049-1056. ISSN 2502-4752
  9. Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.
  10. Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished)
  11. Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)
  12. Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering, 16 (3). pp. 117-126. ISSN 1448-837X E-ISSN 2205-362X (In Press)
  13. Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,
  14. Hasbullah, Nurul Fadzlin and Ahmad Fauzi, Dhiyauddin (2014) Investigation of Current Leakage Mechanisms on InAs Nanoisland Diodes for Radiation Hardness. Project Report. UNSPECIFIED. (Unpublished)
  15. Abd-alla, Abo-el-nour N. and Othman, Mohamed I.A and Hasbullah, Nurul Fadzlin (2019) Shear horizontal waves in composite materials: behavior under rotation and initial stress. Mathematics and Mechanics of Solids, 24 (1). pp. 85-97. ISSN 1081-2865 E-ISSN 1741-3028
  16. Idris, N. F. and Lokman, Muhammad Quisar and Harun, Sulaiman Wadi and Rahim, H. R.A. and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2018) Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber. Journal of Telecommunication, Electronic and Computer Engineering, 10 (2-7). pp. 73-77. ISSN 2180-1843 E-ISSN 2289-8131
  17. Hasbullah, Nurul Fadzlin (2018) FRGS 15–244–0485 Final Report: Novel Model on Leakage Current Mechanisms of Radiation Hard Silicon Carbide Schottky Diodes. Research Report. UNSPECIFIED. (Unpublished)
  18. Hasbullah, Nurul Fadzlin and Shuhaimi, Nafiz ‘Irfan and Abdullah, Yusof and Mohd Khairi, Mohamad Azim (2020) Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode. Nuclear Science and Techniques, 8 (2). pp. 298-305. ISSN 20893272
  19. Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826
  20. Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760

Most Viewed Items

Item titleViews
1Radiation characteristics and SEU rates in NEqO environment using SPENVIS850
2Cooling techniques for single photon avalanche diode841
3Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode823
43MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs793
5Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures777
6p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency773
7Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber772
8Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation772
9The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode772
10Effect of modulation p-doping on the optical properties of quantum dot laser structure762
11Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor759
12A review of leakage current mechanism in nitride based light emitting diode758
13Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation755
14Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes755
15Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures752
16Electrical properties of neutron-irradiated silicon and GaAs commercial diodes 748
17Energy and power estimation for three different locations in Palestine748
18A review of high ideality factor in gallium nitride-based light-emitting diode730
19Effects of neutron irradiation on various electronic devices727
20Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons726
21Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation714
22Shear horizontal waves in composite materials: behavior under rotation and initial stress711
23Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation704
24Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation704
25Electroluminescence studies of modulation p-doped quantum dot laser structures703
26Simplified channel authentication algorithm for secure quantum key distribution690
27Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies687
28Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes686
29Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures682
30Electrical characterization of commercial power MOSFET under electron radiation682