IIUM Repository

Dr Nurul Fadzlin Hasbullah

KULLIYYAH OF ENGINEERING

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  1. Jiang, Bing-Huang and Huang, Zih-Ruei and Su, Yu-Wei and Shi, Zhong-En and Hasbullah, Nurul Fadzlin and Hsu, Yu-Chih and Yu, Yang-Yen and Chen, Chih-Ping (2025) Interface engineering with co-self-assembled monolayers for improved charge extraction and morphology in organic photovoltaics. ACS Applied Materials & Interfaces, 17 (46). pp. 63996-64005. ISSN 1944-8244 E-ISSN 1944-8252
  2. Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina and Siddiqui, Naseeb Ahmed and Üzüm, Abdullah and Turhal, Mehmet (2025) Leakage current mechanisms in silicon carbide MOSFETs - a review. Transactions on Electrical and Electronic Materials, 26 (6). pp. 779-800. ISSN 1229-7607 E-ISSN 2092-7592
  3. Baba, Tamana and Hasbullah, Nurul Fadzlin and Javed, Yasir and Khan, Zafar Iqbal and Sulaiman, Nurul Nabiilah (2025) Effect of low-energy proton radiation on the degradation of silicon carbide Schottky diodes. Journal of Electronic Materials, 54 (7). pp. 5984-5992. ISSN 0361-5235 E-ISSN 1543-186X
  4. Baba, Tamana and Javed, Yasir and Iqbal Khan, Zafar and Ali, Turab and Hasbullah, Nurul Fadzlin (2024) Investigation of proton radiation effect on indium gallium nitride light emitting diodes. Periodica Polytechnica Electrical Engineering and Computer Science, 68 (3). pp. 223-231. ISSN 2064-5260 E-ISSN 2064-5279
  5. Baba, Tamana and Siddiqui, Naseeb Ahmed and Saidin, Norazlina and Md Yusoff, Siti Harwani and Abdul Sani, Siti Fairus and Abdul Karim, Julia and Hasbullah, Nurul Fadzlin (2024) Radiation-induced degradation of silicon carbide MOSFETs – a review. Materials Science & Engineering: B, 300. pp. 1-13. ISSN 0921-5107 E-ISSN 1873-4944
  6. Baba, Tamana and Husni, Muhammad Hazeeq and Saidin, Norazlina and Hasbullah, Nurul Fadzlin (2024) Effect of proton radiation on gallium nitride light emitting diodes. Bulletin of Electrical Engineering and Informatics, 13 (1). pp. 194-201. ISSN 2089-3191 E-ISSN 2302-9285
  7. Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2023) Degradation of InGaN LEDs by proton radiation. In: 8th International Conference on Business and Industrial Research (ICBIR 2023), 18th - 19th May 2023, Bangkok, Thailand.
  8. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin (2021) A review of high ideality factor in gallium nitride-based light-emitting diode. Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (1). pp. 83-89. ISSN 1560-8034 E-ISSN 1605-6582
  9. Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
  10. Benkara, Souaad and Mahmud, Manzar and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2016) Radiation characteristics and SEU rates in NEqO environment using SPENVIS. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  11. Badawi, Ahmed S.A. and Hasbullaha, Nurul Fadzlin and Yusoff, Siti Hajar and Hassan Abdalla Hashim, Aisha (2019) Energy and power estimation for three different locations in Palestine. Indonesian Journal of Electrical Engineering and Computer Science, 14 (3). pp. 1049-1056. ISSN 2502-4752
  12. Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.
  13. Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished)
  14. Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)
  15. Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering, 16 (3). pp. 117-126. ISSN 1448-837X E-ISSN 2205-362X (In Press)
  16. Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,
  17. Hasbullah, Nurul Fadzlin and Ahmad Fauzi, Dhiyauddin (2014) Investigation of Current Leakage Mechanisms on InAs Nanoisland Diodes for Radiation Hardness. Project Report. UNSPECIFIED. (Unpublished)
  18. Abd-alla, Abo-el-nour N. and Othman, Mohamed I.A and Hasbullah, Nurul Fadzlin (2019) Shear horizontal waves in composite materials: behavior under rotation and initial stress. Mathematics and Mechanics of Solids, 24 (1). pp. 85-97. ISSN 1081-2865 E-ISSN 1741-3028
  19. Idris, N. F. and Lokman, Muhammad Quisar and Harun, Sulaiman Wadi and Rahim, H. R.A. and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2018) Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber. Journal of Telecommunication, Electronic and Computer Engineering, 10 (2-7). pp. 73-77. ISSN 2180-1843 E-ISSN 2289-8131
  20. Hasbullah, Nurul Fadzlin (2018) FRGS 15–244–0485 Final Report: Novel Model on Leakage Current Mechanisms of Radiation Hard Silicon Carbide Schottky Diodes. Research Report. UNSPECIFIED. (Unpublished)

Most Viewed Items

Item titleViews
1Radiation characteristics and SEU rates in NEqO environment using SPENVIS1295
2Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode1271
3Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber1254
4Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons1230
5Cooling techniques for single photon avalanche diode1213
6Energy and power estimation for three different locations in Palestine1205
7The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode1197
8Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures1190
9Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation1172
10Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation1165
11Effect of modulation p-doping on the optical properties of quantum dot laser structure1163
12Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes1163
133MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs1161
14Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature1156
15Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation1149
16Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor1145
17A review of high ideality factor in gallium nitride-based light-emitting diode1144
18p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency1142
19Electrical properties of neutron-irradiated silicon and GaAs commercial diodes 1138
20Shear horizontal waves in composite materials: behavior under rotation and initial stress1133
21Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures1127
22A review of leakage current mechanism in nitride based light emitting diode1125
23Simplified channel authentication algorithm for secure quantum key distribution1110
24Effects of neutron irradiation on various electronic devices1110
25Electroluminescence studies of modulation p-doped quantum dot laser structures1108
26Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation1104
27Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation1081
28Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies1080
29Electrical characterization of commercial power MOSFET under electron radiation1071
30Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes1070