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Dr Nurul Fadzlin Hasbullah

KULLIYYAH OF ENGINEERING

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  1. Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
  2. Benkara, Souaad and Mahmud, Manzar and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2016) Radiation characteristics and SEU rates in NEqO environment using SPENVIS. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  3. Badawi, Ahmed S.A. and Hasbullaha, Nurul Fadzlin and Yusoff, Siti Hajar and Hassan Abdalla Hashim, Aisha (2019) Energy and power estimation for three different locations in Palestine. Indonesian Journal of Electrical Engineering and Computer Science, 14 (3). pp. 1049-1056. ISSN 2502-4752
  4. Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.
  5. Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished)
  6. Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)
  7. Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering, 16 (3). pp. 117-126. ISSN 1448-837X E-ISSN 2205-362X (In Press)
  8. Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,
  9. Abd-alla, Abo-el-nour N. and Othman, Mohamed I.A and Hasbullah, Nurul Fadzlin (2019) Shear horizontal waves in composite materials: behavior under rotation and initial stress. Mathematics and Mechanics of Solids, 24 (1). pp. 85-97. ISSN 1081-2865 E-ISSN 1741-3028
  10. Idris, N. F. and Lokman, Muhammad Quisar and Harun, Sulaiman Wadi and Rahim, H. R.A. and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2018) Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber. Journal of Telecommunication, Electronic and Computer Engineering, 10 (2-7). pp. 73-77. ISSN 2180-1843 E-ISSN 2289-8131
  11. Hasbullah, Nurul Fadzlin and Shuhaimi, Nafiz ‘Irfan and Abdullah, Yusof and Mohd Khairi, Mohamad Azim (2020) Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode. Nuclear Science and Techniques, 8 (2). pp. 298-305. ISSN 20893272
  12. Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826
  13. Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760
  14. Abd-alla, Abo el nour N and Hasbullah, Nurul Fadzlin and Hossen, Hala M. (2016) The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress. Journal of Computational and Theoretical Nanoscience, 13 (10). pp. 6475-6481. ISSN 1546-1955
  15. Hedzir, Anati Syahirah and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2016) A review of leakage current mechanism in nitride based light emitting diode. Malaysian Journal of Fundamental and Applied Sciences, 12 (2). pp. 77-84. ISSN 2289-5981 E-ISSN 2289-599X
  16. Ahamad Sukor, Masturah and Hasbullah, Nurul Fadzlin and Ibrahim, Siti Noorjannah (2016) Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.
  17. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Abdullah, Yusof and Muridan, Norasmahan (2016) Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  18. Hedzir, Anati Syahirah and Muridan, Norasmahan and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2016) Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.
  19. Abubakkar, Sheik Fareed Ookar and Hasbullah, Nurul Fadzlin and Zabah, Nor Farahidah and Abdullah, Yusof (2014) 3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs. In: 5th International Conference on Computer and Communication Engineering (ICCCE 2014), 23-25 Sep 2014, Kuala Lumpur.
  20. Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and ., Md. Rashid and Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Mohamed Zin, muhammad Rawi (2013) Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures. In: 2013 IEEE 4th International Conference on Photonics (ICP), 28th-30th Oct. 2013, Equatorial Hotel, Melaka.

Most Viewed Items

Item titleViews
1Electroluminescence studies of modulation p-doped quantum dot laser structures1463
2Effect of modulation p-doping on the optical properties of quantum dot laser structure1388
3p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency1385
4Quantum dots as a solution to radiation hardness1364
5Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures1325
6Effects of neutron irradiation on various electronic devices1258
7Capacitance-voltage fitting algorithm for doping profile characterisation of Mesa Diodes using MATLAB1252
8Reverse leakage current mechanisms in quantum dot laser structures1251
9Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes1194
10Cooling techniques for single photon avalanche diode1133
11Neutron source and neutron shielding1110
12Electrical properties of neutron-irradiated silicon and GaAs commercial diodes 1074
13Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation1056
14Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation963
153MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs914
16Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor906
17Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures856
18Simplified channel authentication algorithm for secure quantum key distribution824
19Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures819
20The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress686
21Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation664
22Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass619
23A review of leakage current mechanism in nitride based light emitting diode603
24The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode490
25Electrical characterization of commercial power MOSFET under electron radiation460
26Energy and power estimation for three different locations in Palestine381
27Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber381
28Shear horizontal waves in composite materials: behavior under rotation and initial stress335
29Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation322
30Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature308