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Dr Nurul Fadzlin Hasbullah

KULLIYYAH OF ENGINEERING

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  1. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin (2021) A review of high ideality factor in gallium nitride-based light-emitting diode. Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (1). pp. 83-89. ISSN 1560-8034 E-ISSN 1605-6582
  2. Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
  3. Benkara, Souaad and Mahmud, Manzar and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2016) Radiation characteristics and SEU rates in NEqO environment using SPENVIS. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  4. Badawi, Ahmed S.A. and Hasbullaha, Nurul Fadzlin and Yusoff, Siti Hajar and Hassan Abdalla Hashim, Aisha (2019) Energy and power estimation for three different locations in Palestine. Indonesian Journal of Electrical Engineering and Computer Science, 14 (3). pp. 1049-1056. ISSN 2502-4752
  5. Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.
  6. Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished)
  7. Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)
  8. Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering, 16 (3). pp. 117-126. ISSN 1448-837X E-ISSN 2205-362X (In Press)
  9. Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,
  10. Hasbullah, Nurul Fadzlin and Ahmad Fauzi, Dhiyauddin (2014) Investigation of Current Leakage Mechanisms on InAs Nanoisland Diodes for Radiation Hardness. Project Report. UNSPECIFIED. (Unpublished)
  11. Abd-alla, Abo-el-nour N. and Othman, Mohamed I.A and Hasbullah, Nurul Fadzlin (2019) Shear horizontal waves in composite materials: behavior under rotation and initial stress. Mathematics and Mechanics of Solids, 24 (1). pp. 85-97. ISSN 1081-2865 E-ISSN 1741-3028
  12. Idris, N. F. and Lokman, Muhammad Quisar and Harun, Sulaiman Wadi and Rahim, H. R.A. and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2018) Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber. Journal of Telecommunication, Electronic and Computer Engineering, 10 (2-7). pp. 73-77. ISSN 2180-1843 E-ISSN 2289-8131
  13. Hasbullah, Nurul Fadzlin (2018) FRGS 15–244–0485 Final Report: Novel Model on Leakage Current Mechanisms of Radiation Hard Silicon Carbide Schottky Diodes. Research Report. UNSPECIFIED. (Unpublished)
  14. Hasbullah, Nurul Fadzlin and Shuhaimi, Nafiz ‘Irfan and Abdullah, Yusof and Mohd Khairi, Mohamad Azim (2020) Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode. Nuclear Science and Techniques, 8 (2). pp. 298-305. ISSN 20893272
  15. Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826
  16. Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760
  17. Abd-alla, Abo el nour N and Hasbullah, Nurul Fadzlin and Hossen, Hala M. (2016) The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress. Journal of Computational and Theoretical Nanoscience, 13 (10). pp. 6475-6481. ISSN 1546-1955
  18. Hedzir, Anati Syahirah and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2016) A review of leakage current mechanism in nitride based light emitting diode. Malaysian Journal of Fundamental and Applied Sciences, 12 (2). pp. 77-84. ISSN 2289-5981 E-ISSN 2289-599X
  19. Ahamad Sukor, Masturah and Hasbullah, Nurul Fadzlin and Ibrahim, Siti Noorjannah (2016) Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.
  20. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Abdullah, Yusof and Muridan, Norasmahan (2016) Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.

Most Viewed Items

Item titleViews
1Electroluminescence studies of modulation p-doped quantum dot laser structures1519
2p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency1442
3Effect of modulation p-doping on the optical properties of quantum dot laser structure1441
4Quantum dots as a solution to radiation hardness1407
5Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures1379
6Capacitance-voltage fitting algorithm for doping profile characterisation of Mesa Diodes using MATLAB1304
7Effects of neutron irradiation on various electronic devices1300
8Reverse leakage current mechanisms in quantum dot laser structures1299
9Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes1242
10Cooling techniques for single photon avalanche diode1181
11Neutron source and neutron shielding1160
12Electrical properties of neutron-irradiated silicon and GaAs commercial diodes 1115
13Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation1101
14Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation1017
15Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor969
163MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs962
17Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures907
18Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures869
19Simplified channel authentication algorithm for secure quantum key distribution868
20The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress730
21Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation709
22Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass662
23A review of leakage current mechanism in nitride based light emitting diode645
24The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode548
25Electrical characterization of commercial power MOSFET under electron radiation506
26Energy and power estimation for three different locations in Palestine430
27Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber428
28Shear horizontal waves in composite materials: behavior under rotation and initial stress384
29Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation362
30Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature349