IIUM Repository

Dr Nurul Fadzlin Hasbullah

KULLIYYAH OF ENGINEERING

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  1. Baba, Tamana and Siddiqui, Naseeb Ahmed and Saidin, Norazlina and Md Yusoff, Siti Harwani and Abdul Sani, Siti Fairus and Abdul Karim, Julia and Hasbullah, Nurul Fadzlin (2024) Radiation-induced degradation of silicon carbide MOSFETs – a review. Materials Science & Engineering: B, 300. pp. 1-13. ISSN 0921-5107 E-ISSN 1873-4944
  2. Baba, Tamana and Husni, Muhammad Hazeeq and Saidin, Norazlina and Hasbullah, Nurul Fadzlin (2024) Effect of proton radiation on gallium nitride light emitting diodes. Bulletin of Electrical Engineering and Informatics, 13 (1). pp. 194-201. ISSN 2089-3191 E-ISSN 2302-9285
  3. Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2023) Degradation of InGaN LEDs by proton radiation. In: 8th International Conference on Business and Industrial Research (ICBIR 2023), 18th - 19th May 2023, Bangkok, Thailand.
  4. Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin (2021) A review of high ideality factor in gallium nitride-based light-emitting diode. Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (1). pp. 83-89. ISSN 1560-8034 E-ISSN 1605-6582
  5. Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
  6. Benkara, Souaad and Mahmud, Manzar and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2016) Radiation characteristics and SEU rates in NEqO environment using SPENVIS. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.
  7. Badawi, Ahmed S.A. and Hasbullaha, Nurul Fadzlin and Yusoff, Siti Hajar and Hassan Abdalla Hashim, Aisha (2019) Energy and power estimation for three different locations in Palestine. Indonesian Journal of Electrical Engineering and Computer Science, 14 (3). pp. 1049-1056. ISSN 2502-4752
  8. Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.
  9. Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished)
  10. Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)
  11. Ahamad Sukor, Masturah and Hedzir, Anati Syahira and Sabri, Sharizal Fadlie and Hasbullah, Nurul Fadzlin (2019) Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies. Australian Journal of Electrical and Electronics Engineering, 16 (3). pp. 117-126. ISSN 1448-837X E-ISSN 2205-362X (In Press)
  12. Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,
  13. Hasbullah, Nurul Fadzlin and Ahmad Fauzi, Dhiyauddin (2014) Investigation of Current Leakage Mechanisms on InAs Nanoisland Diodes for Radiation Hardness. Project Report. UNSPECIFIED. (Unpublished)
  14. Abd-alla, Abo-el-nour N. and Othman, Mohamed I.A and Hasbullah, Nurul Fadzlin (2019) Shear horizontal waves in composite materials: behavior under rotation and initial stress. Mathematics and Mechanics of Solids, 24 (1). pp. 85-97. ISSN 1081-2865 E-ISSN 1741-3028
  15. Idris, N. F. and Lokman, Muhammad Quisar and Harun, Sulaiman Wadi and Rahim, H. R.A. and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2018) Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber. Journal of Telecommunication, Electronic and Computer Engineering, 10 (2-7). pp. 73-77. ISSN 2180-1843 E-ISSN 2289-8131
  16. Hasbullah, Nurul Fadzlin (2018) FRGS 15–244–0485 Final Report: Novel Model on Leakage Current Mechanisms of Radiation Hard Silicon Carbide Schottky Diodes. Research Report. UNSPECIFIED. (Unpublished)
  17. Hasbullah, Nurul Fadzlin and Shuhaimi, Nafiz ‘Irfan and Abdullah, Yusof and Mohd Khairi, Mohamad Azim (2020) Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode. Nuclear Science and Techniques, 8 (2). pp. 298-305. ISSN 20893272
  18. Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826
  19. Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760
  20. Abd-alla, Abo el nour N and Hasbullah, Nurul Fadzlin and Hossen, Hala M. (2016) The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress. Journal of Computational and Theoretical Nanoscience, 13 (10). pp. 6475-6481. ISSN 1546-1955

Most Viewed Items

Item titleViews
1Cooling techniques for single photon avalanche diode645
2Radiation characteristics and SEU rates in NEqO environment using SPENVIS625
3Impact of electron radiation dose to the performance of half-wave rectifier and converter circuits with silicon carbide Schottky diode602
4p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency594
5Influence of growth duration to the Zinc Oxide (ZnO) nanorods on single-mode silica fiber583
6Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor580
7Effect of modulation p-doping on the optical properties of quantum dot laser structure579
8The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode566
9Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures563
10Electrical properties of neutron-irradiated silicon and GaAs commercial diodes 563
11Effects of neutron irradiation on various electronic devices555
12Energy and power estimation for three different locations in Palestine554
133MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs552
14Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation551
15Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes550
16A review of leakage current mechanism in nitride based light emitting diode545
17Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures542
18Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation538
19Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation526
20Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies525
21Shear horizontal waves in composite materials: behavior under rotation and initial stress522
22A review of high ideality factor in gallium nitride-based light-emitting diode516
23Simplified channel authentication algorithm for secure quantum key distribution515
24Electroluminescence studies of modulation p-doped quantum dot laser structures514
25Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons513
26Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass510
27Reverse leakage current mechanisms in quantum dot laser structures509
28Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes507
29Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation505
30Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures487