Hedzir, Anati Syahirah and Muridan, Norasmahan and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2016) Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.
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Abstract
The effects of electron radiation on commercially fabricated gallium nitride light emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high breakdown voltage, making it suitable to be used in an extreme environment. LED based on this material is used as part of visible light communication and as an illuminating source in space. However, due to the presence of high energy electron in space, these LEDs are vulnerable towards electron radiation. Hence, this paper focus on the electrical characterization of commercial Gallium Nitride (GaN) LEDs subjected to electron radiation dose ranged from 1MGy to 10MGy. The devices that were used in this study are Kingbright GaN Blue LEDs (part #L-53MBC) and Vishay GaN Blue LEDs (part #TLHB5400). Capacitance-voltage (C-V) characteristics of commercial GaN LEDs before and after irradiation were investigated. As the radiation dose increase, the amount of capacitance and doping concentration decreases. This is believed due to deactivation of dopants atoms in the bulk.
Item Type: | Conference or Workshop Item (Plenary Papers) |
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Additional Information: | 4161/52339 |
Uncontrolled Keywords: | Capacitance-Voltage, Gallium Nitride, Indium Gallium Nitride, Light Emitting Diode, Electron Radiation |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): | Kulliyyah of Engineering > Department of Electrical and Computer Engineering |
Depositing User: | Dr Nurul Fadzlin Hasbullah |
Date Deposited: | 10 Jan 2017 17:18 |
Last Modified: | 16 Jan 2017 11:54 |
URI: | http://irep.iium.edu.my/id/eprint/52339 |
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