A review of leakage current mechanism in nitride based light emitting diode

Hedzir, Anati Syahirah and Muridan, Norasmahan and Hasbullah, Nurul Fadzlin (2016) A review of leakage current mechanism in nitride based light emitting diode. Malaysian Journal of Fundamental and Applied Sciences, 12 (2). pp. 77-84. ISSN 2289-5981 E-ISSN 2289-599X

	PDF - Published Version Restricted to Repository staff only Download (7MB) | Request a copy
Preview	PDF (WOS) Download (201kB) | Preview

Abstract

We review the dominant mechanism and characteristics which give rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). The existence of leakage current can affect the reliability and efficiency of LED. Hence, to understand the mechanism that is responsible for its existence, the occurrence of leakage current is divided into three main parameters: 1) low bias; 2) medium or high bias; 3) temperature dependence. For reverse bias, many reports suggest Poole-Frenkel as the dominant mechanism in low reverse bias and some others suggested the field dependent tunneling mechanism. In high reverse bias, many studies have shown tunneling to be the dominant mechanism. However ,there is also few other papers suggesting variable range hopping (VRH) or PF being a dominant mechanism. When the reverse bias currentvoltage measurement below 200 K, majority studies reported VRH to be the dominant mechanism. Meanwhile, for forward bias, defect-assisted tunneling is most likely the dominant mechanism. At low forward voltages, electrons are believed to be the dominant carriers for defect assisted tunneling, while holes are reported to be likely the dominant carrier in medium forward voltages.

Item Type:	Article (Journal)
Additional Information:	4527/56260
Uncontrolled Keywords:	Reverse leakage current, forward leakage current, Poole-Frenkel, variable range hopping, tunneling.
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	05 Apr 2017 14:33
Last Modified:	05 Apr 2017 14:34
URI:	http://irep.iium.edu.my/id/eprint/56260

Actions (login required)

View Item