Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature

Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press)

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Abstract

Thermal dependence experiments have been carried out on silicon carbide Schottky power diodes. The devices were exposed to 3 MeV electrons with 10 MGy dose. Current density-voltage (~300 K to ~490 K) characterization have been used for the investigation. The results show that, at the highest tested temperature, the forward current density at 0.3 V increased approximately 7 orders of magnitude for unirradiated devices and approximately 8 orders of magnitude for the irradiated devices. The increase is believed due to the generation of free carriers which obtained the energy from the temperature. The series resistance of unirradiated increased with increasing temperature which may be due to the decrease in the free carrier mobility, whilst the series resistance of irradiated devices decreased with increasing temperature which indicates that more free carriers have acquired enough energy to be released from the traps introduced by the irradiation. The reverse current density shows that the current increased with increasing temperature due to the radiation-induced defects that act as generation-recombination centres. The activation energies of the irradiated devices were derived, and it is higher than the unirradiated devices. On top of that, there are two slopes in the plot of the activation energy versus voltage which suggests that the reverse leakage current is probably due to two different type of mechanisms.

Item Type:	Article (Journal)
Additional Information:	4257/72560
Uncontrolled Keywords:	electron radiation; SiC; Schottky diode; high voltage; temperature dependent; electrical characterization; activation energy; leakage current mechanism.
Subjects:	T Technology > T Technology (General) T Technology > T Technology (General) > T175 Industrial research. Research and development T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	12 Jun 2019 15:06
Last Modified:	12 Jun 2019 15:06
URI:	http://irep.iium.edu.my/id/eprint/72560

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