Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation

Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Alang Md Rashid, Nahrul Khair and Abdullah, Jaafar (2012) Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to Californium-252 radiation. In: International Conference on Computer and Communication Engineering (ICCCE 2012), 3-5 July 2012, Seri Pacific Hotel Kuala Lumpur.

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Abstract

The aim of this research is to investigate the effects of neutron irradiation using Cf-252 neutron source on different types of commercially available Si and GaAs diodes. Pre and post irradiation effects are compared by analyzing their respective forward bias (FB) and reverse bias (RB) current-voltage (I-V) characteristics. It was discovered that, at low neutron dose of up to 178.63mSv, the electrical characteristics of silicon diodes improved as indicated by a reduction in FB and RB leakage current, ideality factor and series resistance. However, GaAs diodes show a significant leakage current increment in RB which is interpreted as being due to damage displacement.

Item Type:	Conference or Workshop Item (Full Paper)
Additional Information:	4527/28980
Uncontrolled Keywords:	commercial diode , defect reordering , displacement damage , leakage current , radiation effects , semiconductors
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering Kulliyyah of Engineering > Department of Mechatronics Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	14 Feb 2013 08:57
Last Modified:	15 Feb 2013 08:33
URI:	http://irep.iium.edu.my/id/eprint/28980

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