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Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285,

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This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

Item Type: Article (Journal)
Additional Information: 4269/72556
Uncontrolled Keywords: Electrical characterization, Electron radiation, Schottky diode, Silicon carbide, Wide bandgap semiconductor,
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr Nurul Fadzlin Hasbullah
Date Deposited: 12 Jun 2019 15:55
Last Modified: 12 Jun 2019 15:55
URI: http://irep.iium.edu.my/id/eprint/72556

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