A review of high ideality factor in gallium nitride-based light-emitting diode

Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin (2021) A review of high ideality factor in gallium nitride-based light-emitting diode. Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (1). pp. 83-89. ISSN 1560-8034 E-ISSN 1605-6582

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Abstract

Theory concerning the high ideality factor of gallium nitride (GaN) based light emitting diode (LED) has been reviewed. The presence of a high ideality factor indicates a large forward voltage that results in efficiency reduction. The paper suggests that tunneling is the main reason defining the exponential behaviour of current-voltage measurements, which leads to a high ideality factor. However, there is also a paper that suggests that the design of current geometry in the LED chip defines the value of ideality factor. An effective current spreading geometry in the LED chip will minimize the ideality factor and make it fall between the ideal range of 1 to 2. Besides, how the ideality factor is calculated will also play a major role in defining its value. By calculating the ideality factor based solely on the radiative recombination current formula, the value of ideality factor can result in an ideal ideality factor of 1.08.

Item Type:	Article (Journal)
Additional Information:	4527/89339
Uncontrolled Keywords:	gallium nitride, ideality factor, light-emitting diode, tunneling.
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	15 Apr 2021 08:31
Last Modified:	21 Aug 2023 12:36
URI:	http://irep.iium.edu.my/id/eprint/89339

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