Effect of Ferro electric thickness on Negative Capacitance FET (NCFET)

Hashim, Muhaimin Bin Mohd and Alam, A. H. M. Zahirul and Darmis, Naimah Binti (2021) Effect of Ferro electric thickness on Negative Capacitance FET (NCFET). IIUM Engineering Journal, 22 (1). pp. 339-346. ISSN 1511-788X E-ISSN 2289-7860

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Abstract

Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor. A comprehensive study of the Negative Capacitance Field Effect Transistor (NCFETis presented. This paper shows the effect of ferroelectric material in MOSFET structure by replacing the insulator in the conventional MOSFET. It should be possible to obtain a steeper subthreshold swing (SS) compared to the one without a ferroelectric material layer, thus breaking the fundamental limit on the operating voltage of MOSFET. 27% of the subthreshold slope reduction is observed by introducing ferroelectric in the dielectric layer compared to the conventional MOSFETs. Hence, the power dissipation in MOSFET can be mitigated and shine to a new technology of a low voltage/low power transistor operation.

Item Type:	Article (Journal)
Uncontrolled Keywords:	NCFETs, Ferroelectric, Subthreshold
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Prof. Dr. AHM Zahirul Alam
Date Deposited:	08 Feb 2021 09:22
Last Modified:	25 May 2021 15:06
URI:	http://irep.iium.edu.my/id/eprint/88138

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