Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002
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Abstract
We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse-leakage current increases twice under the fluence 9.90×1016 electrons/cm2. This suggests the existence of radiation damage-induced traps. The irradiation reduces the capacitance and the carrier concentration, which can be attributed to deactivation of dopant atoms. Basing on electroluminescence measurements, we prove that the luminescence intensity and the red shift of peak position increase significantly with increasing dose. The peak-wavelength shift can be attributed primarily to the radiation-induced defects that cause formation of red bands and, at the same time, gradually suppress the band-edge luminescence.
Item Type: | Article (Journal) |
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Additional Information: | 4161/75400 |
Uncontrolled Keywords: | gallium nitride, light emitting diodes, current–voltage characteristics, capacitance–voltage characteristics, electroluminescence |
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): | Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering |
Depositing User: | Dr Nurul Fadzlin Hasbullah |
Date Deposited: | 16 Oct 2019 16:59 |
Last Modified: | 21 Nov 2019 17:43 |
URI: | http://irep.iium.edu.my/id/eprint/75400 |
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