Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan.

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Abstract

Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device.

Item Type:	Conference or Workshop Item (Plenary Papers)
Additional Information:	452/72573
Uncontrolled Keywords:	gallium nitride (GaN) diodes, high dose electron irradiation
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	13 Jun 2019 09:05
Last Modified:	13 Jun 2019 09:05
URI:	http://irep.iium.edu.my/id/eprint/72573

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