A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch

Ma, Li-Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2017) A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch. In: 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 23rd - 25th August 2017, Penang, Malaysia.

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Abstract

—A low-voltage low-loss K-band 3-bit MEMS switched-line phase shifter is presented in this work. The phase shifter is constructed by novel shunt capacitive RF-MEMS switches and coplanar waveguide lines on a high-resistivity silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage = 3.04V) is employed and exhibits good RF characteristics by using T-match technique where its insertion loss and isolation is - 0.1291dB and -28.75dB, respectively at frequency of 20GHz. The 3-bit MEMS phase shifter is assembled by three single-bit units (namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures; the average phase error and average insertion loss is 0.2445° and -2.447dB, respectively, at 20GHz; its return loss is better than 10dB at a wideband frequency range of up to 20GHz. The whole design area is 6mm*4mm

Item Type:	Conference or Workshop Item (Plenary Papers)
Additional Information:	3239/61953
Uncontrolled Keywords:	RF-MEMS switch; low-voltage; low-loss; K-band
Subjects:	T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr. Anis Nurashikin Nordin
Date Deposited:	08 Mar 2018 12:04
Last Modified:	26 Jun 2018 11:55
URI:	http://irep.iium.edu.my/id/eprint/61953

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