Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)

Sirat, Mohd Shukri and Ismail, Edhuan and Purwanto, Hadi and Mohd Abid, Mohd Asyadi Azam and Ani, Mohd Hanafi (2017) Growth conditions of graphene grown in Chemical Vapour Deposition (CVD). Sains Malaysiana, 46 (7). pp. 1033-1038. ISSN 0126-6039

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Abstract

The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene.

Item Type:	Article (Journal)
Additional Information:	5804/60671
Uncontrolled Keywords:	Chemical vapour deposition (CVD); graphene; optimization
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) > TA401 Materials of engineering and construction T Technology > TP Chemical technology > TP155 Chemical engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Hanafi Ani
Date Deposited:	28 Dec 2017 19:50
Last Modified:	04 May 2018 16:46
URI:	http://irep.iium.edu.my/id/eprint/60671

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