Effect of the flash annealing on the impurity distribution and the electronic structure in the inversion layer

Sakata, Tomohiro and Takeda, Sakura Nishino. and Ayob, Nur Idayu and Daimon, Hiroshi (2015) Effect of the flash annealing on the impurity distribution and the electronic structure in the inversion layer. e-Journal of Surface Science and Nanotechnology, 13. pp. 75-78. ISSN 1348-0391

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Abstract

We investigated the relationship among the number of flash annealing times to obtain Si clean surface and the change of arsenic dopant concentration and subband levels using secondary ion mass spectroscopy (SIMS) and angle-resolved photoelectron spectroscopy(ARPES). The SIMS result shows that the first five times of the flash annealing already induces significant reduction of the dopant concentration in agreement with the recent work [Pitter et al., J. Vac. Sci. Technol. B 30, 021806 (2012)]. We found the energies of hole subband levels rapidly decrease as the number of the flash annealing times increases. We calculated the subband levels in a broadened confinement potential taking the dopant reduction determined by SIMS into account. The energy separations of the calculated subband levels were in good agreement with the ARPES results. [DOI: 10.1380/ejssnt.2015.75]

Item Type:	Article (Journal)
Additional Information:	7640/56960
Uncontrolled Keywords:	Angle resolved photoemission; Dopant Hole subband; Pb Si(111)
Subjects:	Q Science > QC Physics T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr. Nur Idayu Ayob
Date Deposited:	04 Jan 2018 17:08
Last Modified:	04 Jan 2018 17:08
URI:	http://irep.iium.edu.my/id/eprint/56960

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