Design and analysis of a low-voltage electrostatic actuated RF CMOS-MEMS switch

Ma, Li Ya and Nordin, Anis Nurashikin and Soin, Norhayati (2013) Design and analysis of a low-voltage electrostatic actuated RF CMOS-MEMS switch. In: 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 25-27 September 2013, Langkawi, Malaysia.

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Abstract

This paper presents the design and analysis of a radio frequency (RF) micro-electromechanical system (MEMS) switch with low actuation voltage using MIMOS 0.35μm complementary metal oxide semiconductor (CMOS) process. The advantage of this RF MEMS switch is very low actuation voltage design which is compatible with other CMOS circuit without employing a separate on-chip voltage source or charge pump unit. Moreover, using CMOS technology to design can highly simplify the fabrication process, reduce the cost and improve the device performance. The RF MEMS switch is a capacitive shunt- connection type device which uses four folded beams to support a big membrane above the signal transmission line. The pull-in voltage, von Mises stress distribution and vertical displacement of the membrane, up-state and down-state capacitances, as well as the switch impedance is calculated and analyzed by finite element modelling (FEM) simulation.

Item Type:	Conference or Workshop Item (Lecture)
Additional Information:	3239/46633
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr. Anis Nurashikin Nordin
Date Deposited:	06 Jan 2016 16:23
Last Modified:	15 Jul 2016 15:39
URI:	http://irep.iium.edu.my/id/eprint/46633

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