Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and ., Md. Rashid and Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Mohamed Zin, muhammad Rawi (2013) Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures. In: 2013 IEEE 4th International Conference on Photonics (ICP), 28th-30th Oct. 2013, Equatorial Hotel, Melaka.

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Abstract

The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes

Item Type:	Conference or Workshop Item (Full Paper)
Additional Information:	5928/46587 (ISBN: 978-1-4673-6075-3, DOI: 10.1109/ICP.2013.6687122)
Uncontrolled Keywords:	Thermal neutron; InAs quantum dots; DWELL structure; displacement damage; GaAs infrared emitting diodes
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	01 Mar 2016 13:50
Last Modified:	01 Mar 2016 13:50
URI:	http://irep.iium.edu.my/id/eprint/46587

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