Channel length effect on the saturation current and the threshold voltages of CNTFET

Ani, Mohd Hanafi and Muhamad Ali, Abu Hanifah and Mohamed, Mohd Ambri (2014) Channel length effect on the saturation current and the threshold voltages of CNTFET. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia.

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Abstract

Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET. In this study, direct growth method of CNTs was employed to attach it on FET electrodes with various terminal gaps. The results show that CNTFET has successfully fabricated, with averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs’ chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Additional Information:	4583/40448 (ISBN: 9781479957606)
Uncontrolled Keywords:	CNTFET; Direct Growth Method; Transconductance; Chirality
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Hanafi Ani
Date Deposited:	06 Jan 2015 09:45
Last Modified:	24 May 2018 16:01
URI:	http://irep.iium.edu.my/id/eprint/40448

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