Design and simulation of RF-CMOS SPST switch for reconfigurable RF front-end

Soeroso, Iksannurazmi Bambang and Alam, A. H. M. Zahirul and Nordin, Anis Nurashikin (2014) Design and simulation of RF-CMOS SPST switch for reconfigurable RF front-end. International Journal of Advancement in Electronics and Electrical Engineering, 4 (1). pp. 13-23. ISSN 2278 – 215X

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Abstract

The consumer demands on having multifunctional wireless communication devices have driven current mobile handset to be more complex than it has ever been before. In particular, radio frequency (RF) front-end has evolved to adapt with multi-standards terminals. Thus, by having integrated switches and resonators on the same chip may be considered as a compact solution. In this paper, the design and simulation of RF-CMOS SPST switch is presented. The switch exhibits insertion loss of 1.15-dB and 1.155-dB at 850MHz and 1.125GHz respectively. On the other hand, the isolation is > 22dB in this frequency range while its P1dB is > 20dBm. Pre and post layout of the switch is included in this paper to observe the effect of parasitic capacitance in the layout design.

Item Type:	Article (Journal)
Additional Information:	4575/39250
Uncontrolled Keywords:	Complementary metal-oxide semiconductor (CMOS), surface acoustic wave (SAW) resonator, microelectromechanical systems (MEMS), single pole single throw (SPST), radio frequency
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr. Anis Nurashikin Nordin
Date Deposited:	25 Nov 2014 16:22
Last Modified:	20 Jun 2018 16:45
URI:	http://irep.iium.edu.my/id/eprint/39250

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