Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2013) High frequency small signal modeling of CNTFET. In: 2013 IEEE Regional Symposium on Micro and Nano Electronics (RSM 2013), 25-27 October 2013, Langkawi, Malaysia.
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Abstract
In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed. The performance analysis of the CNTFET shows the desirable performance parameter in terms of 10 Thz frequency with 1.8 mS.
Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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Additional Information: | 4575/32774 |
Uncontrolled Keywords: | CNT;band-gap;FET. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): | Kulliyyah of Engineering > Department of Electrical and Computer Engineering |
Depositing User: | Prof. Dr. AHM Zahirul Alam |
Date Deposited: | 15 Nov 2013 15:51 |
Last Modified: | 14 Jan 2021 10:54 |
URI: | http://irep.iium.edu.my/id/eprint/32774 |
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