Device characteristics of carbon nanotube transistor fabricated by direct growth method

Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2008) Device characteristics of carbon nanotube transistor fabricated by direct growth method. Applied Physics Letters, 92 (24). ISSN 0003-6951

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Abstract

We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteristics are consistent with device operation of the Schottky-type FET. The carrier injection barrier heights for both the electron and hole carriers show small values of 17– 74 meV, without any additional specific treatment after device fabrication.

Item Type:	Article (Journal)
Additional Information:	6933/29896
Subjects:	Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) > TA165 Engineering instruments, meters, etc. Industrial instrumentation T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Ambri Mohamed
Date Deposited:	25 Jul 2013 16:13
Last Modified:	25 Jul 2013 16:13
URI:	http://irep.iium.edu.my/id/eprint/29896

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