IIUM Repository

Dr Mohd Ambri Mohamed

Department of Manufacturing and Materials Engineering

International Islamic University Malaysia

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Latest Additions

  1. Mohamed, Mohd Ambri and Otsuka, Nobuo and Pham, Tien Lam (2013) Transition of electron transport process in Be-doped low-temperature-grown GaAs layer. Journal of Applied Physics, 114 (083716). pp. 1-4. ISSN 0021-8979
  2. Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2008) Device characteristics of carbon nanotube transistor fabricated by direct growth method. Applied Physics Letters, 92 (24). ISSN 0003-6951
  3. Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2007) Synthesis-condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method. Science and Technology of Advanced Materials, 8 (4). pp. 292-295. ISSN 1468-6996
  4. Mohamed, Mohd Ambri and Inami, Nobuhito and Shikoh, Eiji and Yamamoto, Yoshiyuki and Hori, Hidenobu and Fujiwara, Akihiko (2008) Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes. Science and Technology of Advanced Materials, 9 (2). ISSN 1468-6996
  5. Mohamed, Mohd Ambri and Lam, Pham Tien and Otsuka, N. (2013) Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers. Journal of Crystal Growth, 378. pp. 329-332. ISSN 0022-0248 (In Press)
  6. Cuong, Nguyen Tien and Mohamed, Mohd Ambri and Otsuka, Nobuo and Chi, Dam Hieu (2012) Reconstruction and electronic properties of interface between carbon nanotubes and ferromagnetic co electrodes. Applied Mechanics and Materials, 229-31. pp. 183-187. ISSN 1660-9336
  7. Bae, K. W. and Mohamed, Mohd Ambri and Jung, DaeWon and Otsuka, Nobuo (2011) Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers. Journal of Applied Physics, 109 (7). ISSN 0021-8979
  8. Mohamed, Mohd Ambri and Tien Lam, Pham and Bae, K. W. and Otsuka, Nobuo (2011) Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers. Journal of Applied Physics, 110 (12). ISSN 0021-8979
  9. Mohamed, Mohd Ambri and Pham, Tien Lam and N., Otsuka (2013) Non-equilibrium critical point in Be-doped low-temperature-grown GaAs. Journal of Applied Physics, 113 (5). 053504 (1)-053504 (7). ISSN 0021-8979