Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes

Che Omar, Nuurul Iffah and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Abdullah , Jaafar and Hasbullah, Nurul Fadzlin (2012) Effects of neutron on reverse bias characteristics of commercially available SI and gaas diodes. Australian Journal of Basic and Applied Sciences, 6 (9). pp. 211-216. ISSN 1991-8178

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Abstract

This study investigates the effects of neutron radiation on reverse bias characteristics of commercial silicon and gallium arsenide diodes. Reverse bias current-voltage and capacitance-voltage characteristics of the diodes were measured at room temperature before and after irradiation. The diodes were irradiated using Pneumatic Transfer System facility at PUSPATI TRIGA reactor with neutron fluences up to (6.038  3.067) x1012 n /cm2.s for a period of 1, 3 and 5 minutes. The results showed an increase in leakage current for all diodes which may be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The doping concentration of gallium arsenide diodes is observed to decrease after irradiation which is attributed to carrier removal process.

Item Type:	Article (Journal)
Additional Information:	5928/27700
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	23 Jul 2013 15:19
Last Modified:	23 Jul 2013 15:19
URI:	http://irep.iium.edu.my/id/eprint/27700

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