p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Liu, H. Y. and Liew, S. L. and Badcock, T. and Mowbray, D. J. and Skolnick, M. S. and Ray, S. K. and Choi, T. L. and Groom, K. M. and Stevens, B. and Hasbullah, Nurul Fadzlin and Jin, C. Y. and Hopkinson, M. and Hogg, R. A. (2006) p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letter, 89 (7). 073113-1. ISSN 1077-3118 (O), 0003-6951 (P)

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Abstract

Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer.

Item Type:	Article (Journal)
Additional Information:	4527/1306
Uncontrolled Keywords:	InAs/GaAs quantum-dot laser, QD
Subjects:	Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) > TA1501 Applied optics. Lasers
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	15 Aug 2011 11:27
Last Modified:	15 Aug 2011 11:33
URI:	http://irep.iium.edu.my/id/eprint/1306

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