Influence of high-energy electron radiation on the electrical properties of back-gated graphene field effect transistors (GFETs) with different passivation materials

Guzali, Hazim and Ayob, Nur Idayu and Md Ralib @ Md Raghib, Aliza 'Aini and Md Zawawi, Mohamad Adzhar and Che Hak, Cik Rohaida and Ahmad, Zuraida (2026) Influence of high-energy electron radiation on the electrical properties of back-gated graphene field effect transistors (GFETs) with different passivation materials. Physica Scripta, 101 (7). pp. 1-17. ISSN 1402-4896

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Abstract

Back-gated graphene field-effect transistors (GFETs) have attracted significant interest owing to graphene’s exceptional carrier mobility and high sensitivity, making them strong candidates for radiation sensing and detection applications. However, prolonged exposure to a high-energy radiation can degrade the graphene structure and impact device performance. This study presents a simulation-based investigation of back-gated GFETs incorporating different passivation materials (Si3N4, SiO2, and Al2O3) under high-energy electron beam irradiation. The device modeling and radiation response was simulated using Victory Device tool by Silvaco TCAD. A 3 MeV electron beam at doses of 50, 100, and 200 kGy was irradiated to both passivated and non-passivated GFET models. All devices retained ambipolar characteristics with drain current increasing at 50 kGy and saturating at higher doses of 100–200 kGy. The non-passivated GFET exhibited the highest conductivity, attributed to radiation-induced electron–hole pair generation dominating over defect-related scattering, in agreement with previously reported experimental observations. In contrast, the passivated GFETs showed a slight reduction in conductivity, which is attributed to hole trapping at the graphene-passivation interface, inducing parasitic fields that hinder electron mobility. The charge trapping mechanisms responsible for this behavior are systematically introduced and discussed in this study. Overall, despite exhibiting higher conductivity, the non-passivated GFET lacks structural protection against radiation-induced damage. These findings identify SiO2 as a promising radiation-hardened passivation material for GFETs and demonstrate the applicability of TCAD tools in modeling radiation effects on 2D material-based devices.

Item Type:	Article (Journal)
Uncontrolled Keywords:	graphene, GFET,simulation,silvaco TCAD, victory device, electron radiation
Subjects:	T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering Kulliyyah of Engineering
Depositing User:	Dr. Nur Idayu Ayob
Date Deposited:	04 Aug 2026 15:29
Last Update:	04 Aug 2026 15:29
Queue Number:	2026-07-Q4469
URI:	http://irep.iium.edu.my/id/eprint/129891

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