Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina and Siddiqui, Naseeb Ahmed and Üzüm, Abdullah and Turhal, Mehmet
(2025)
Leakage Current Mechanisms in Silicon Carbide MOSFETs - A Review.
Leakage Current Mechanisms in Silicon Carbide MOSFETs - A Review, 26 (https://doi.org/10.1007/s42341-025-00668-y).
pp. 779-800.
Abstract
MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leak
age currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability
and overall system efficiency, leading to issues such as increased power loss, thermal stress, and reduced lifespan of
devices. This review delves into the mechanisms underlying leakage currents in SiC MOSFETs, a promising technology
for high-power applications. The key factors contributing to leakage, such as gate oxide degradation, material properties,
and device architecture, have been identified by examining the research conducted over the past few years. Understand
ing the leakage current mechanisms is crucial for developing effective mitigation strategies and optimizing SiC MOSFET
performance. This review concludes by summarizing key findings and highlighting the importance of ongoing research.
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