Leakage current mechanisms in Silicon Carbide MOSFETs - A review

Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina (2025) Leakage current mechanisms in Silicon Carbide MOSFETs - A review. Transactions on Electrical and Electronic Materials, 26 (6). pp. 779-800. ISSN 1229-7607 E-ISSN 2092-7592

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Abstract

MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leak age currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability and overall system efficiency, leading to issues such as increased power loss, thermal stress, and reduced lifespan of devices. This review delves into the mechanisms underlying leakage currents in SiC MOSFETs, a promising technology for high-power applications. The key factors contributing to leakage, such as gate oxide degradation, material properties, and device architecture, have been identified by examining the research conducted over the past few years. Understanding the leakage current mechanisms is crucial for developing effective mitigation strategies and optimizing SiC MOSFET performance. This review concludes by summarizing key findings and highlighting the importance of ongoing research..

Item Type:	Article (Review)
Additional Information:	4527/125415
Uncontrolled Keywords:	Gate leakage · Junctions · Leakage currents · MOSFET · Silicon carbide (SiC) · Tunneling
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK9001 Nuclear engineering. Atomic power
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Norazlina Saidin
Date Deposited:	09 Dec 2025 10:03
Last Modified:	09 Dec 2025 10:03
Queue Number:	2025-12-Q668
URI:	http://irep.iium.edu.my/id/eprint/125415

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