Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition

Sirat, Mohamad Shukri and Johari, Muhammad Hilmi and Mohmad, Abdul Rahman and Mohammad Haniff, Muhammad Aniq Shazni and Ani, Mohd Hanafi and Syono, Mohd Ismahadi and Mohamed, Mohd Ambri (2022) Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition. Thin Solid Films, 744. pp. 1-8. ISSN 0040-6090

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Abstract

In chemical vapor deposition (CVD), homogeneous molybdenum vapor concentration is important in synthe- sizing uniform thickness and large coverage of two-dimensional molybdenum disulfide (2D-MoS2) films. Here, we synthesize few-layer MoS2 films with uniform thickness and adequate coverage over 50 mm2 size area using ultra-low molybdenum trioxide (MoO3) precursor placed directly under a face-down silicon dioxide/silicon (SiO2/Si) substrate in one-step heating CVD. The precursor mass is controlled by dispersing MoO3 powder in ethanol (C2H5OH) and varying the volume of MoO3/C2H5OH solution coated on SiO2/Si substrates into 10, 20 and 25 μL. Field emission scanning electron microscopy images reveal that 20 μL MoO3/C2H5OH solution pro- duces ~93% area coverage of 2D-MoS2 films. The average Raman spectra show the typical presence of MoS2 peaks around 378.8 cm− 1 and 404 cm− 1 referring to the E12g and A1g modes, respectively. The difference be- tween the two Raman modes for all samples is ~25 cm− 1, indicating few-layer MoS2 films. The thickness of MoS2 films is estimated at around 2.8 ± 0.44 nm and 3.2 ± 0.43 nm (~6 layers) using atomic force microscopy analysis. These findings suggest that ultra-low MoO3 precursor is useful to produce uniform thickness and high coverage few-layer MoS2 films using one-step heating CVD.

Item Type:	Article (Journal)
Uncontrolled Keywords:	Molybdenum disulfide, Molybdenum trioxide, Mo vapor concentration, Uniform thickness, One-step heating Chemical vapor deposition
Subjects:	T Technology > T Technology (General) T Technology > TA Engineering (General). Civil engineering (General) > TA401 Materials of engineering and construction
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Hanafi Ani
Date Deposited:	09 May 2022 11:01
Last Modified:	09 May 2022 11:01
URI:	http://irep.iium.edu.my/id/eprint/97769

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