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Material characterization of a doped triangular silicon nanowire using raman spectroscopy

Za'bah, Nor Farahidah and Md Ralib @ Md Raghib, Aliza 'Aini and Kwa, Kelvin S. K. and O'Neill, Anthony (2018) Material characterization of a doped triangular silicon nanowire using raman spectroscopy. Advanced Science Letters, 24 (11). pp. 8962-8965. ISSN 1936-6612 E-ISSN 1936-7317

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A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxide (TMAH) is known to create geometrical structures due to its anisotropic mechanism of etching. The SOI is doped with an n-type dopant (phosphorus) and the doped silicon nanowire is then characterized using Raman Spectroscopy. Due to the changes in the silicon structure, the result shows that the highly doped silicon nanowire has a wider Full Width Half Maximum (FWHM) as compared to the undoped silicon substrate.

Item Type: Article (Journal)
Additional Information: 5466/71148
Uncontrolled Keywords: Silicon Nanowire, Raman Spectroscopy, FWHM
Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA213 Engineering machinery, tools, and implements
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr. Nor Farahidah Za'bah
Date Deposited: 19 Mar 2019 12:11
Last Modified: 12 Jul 2019 15:13
URI: http://irep.iium.edu.my/id/eprint/71148

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