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Electrical characterization of commercial power MOSFET under electron radiation

Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752

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Abstract

This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiationinduced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage.

Item Type: Article (Journal)
Additional Information: 4527/62829
Uncontrolled Keywords: commercial power mosfet, threshold voltage shifts, electron radiation
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr Nurul Fadzlin Hasbullah
Date Deposited: 20 Mar 2018 11:10
Last Modified: 11 Jul 2018 02:20
URI: http://irep.iium.edu.my/id/eprint/62829

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