Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

Ani, Mohd Hanafi and Helmi, F and Herman, Sukreen Hana and Syed Abu Bakar, Syed Noh (2018) Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application. In: International Conference on Advances in Manufacturing and Materials Engineering (ICAMME 2017), 8th–9th August 2017, Kuala Lumpur, Malaysia.

	PDF - Published Version Restricted to Registered users only Download (879kB) | Request a copy
	PDF (SCOPUS) - Supplemental Material Restricted to Registered users only Download (495kB) | Request a copy

Abstract

Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

Item Type:	Conference or Workshop Item (Plenary Papers)
Additional Information:	4583/62457
Uncontrolled Keywords:	Electronic junctions, High-resistance state, I-V measurements, Low-resistance state, N-type semiconductors, P type semiconductor, Resistive switching, Thermal oxidation
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) > TA401 Materials of engineering and construction
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Hanafi Ani
Date Deposited:	27 Mar 2018 15:09
Last Modified:	29 Jun 2018 12:06
URI:	http://irep.iium.edu.my/id/eprint/62457

Actions (login required)

View Item