Development of high frequency 14 nm CNTFET model

Farhana, Soheli and Alam, A.H.M Zahirul (2016) Development of high frequency 14 nm CNTFET model. Materials Today: Proceedings, 3 (2). pp. 258-264. ISSN 22147853 E-ISSN 2214-7853

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Abstract

Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance and electrostatic capacitance to enhance the mode of nanotube transistor. It can be used for design of nanotube transistor circuits as well as to study performance. A model of the Carbon nanotube transistor with the influence of quantum capacitance and ballistic transport on the high-frequency properties of nanotube transistors is also analyzed in this research.

Item Type:	Article (Journal)
Additional Information:	4575/58756
Uncontrolled Keywords:	Carbon nanotube; FET; NEGF method
Subjects:	Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Prof. Dr. AHM Zahirul Alam
Date Deposited:	12 Oct 2017 18:33
Last Modified:	12 Oct 2017 18:33
URI:	http://irep.iium.edu.my/id/eprint/58756

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