Leakage current mechanisms in silicon carbide MOSFETs - a review

Baba, Tamana and Hasbullah, Nurul Fadzlin and Saidin, Norazlina and Siddiqui, Naseeb Ahmed and Üzüm, Abdullah and Turhal, Mehmet (2025) Leakage current mechanisms in silicon carbide MOSFETs - a review. Transactions on Electrical and Electronic Materials, 26 (6). pp. 779-800. ISSN 1229-7607 E-ISSN 2092-7592

	PDF (Review) - Published Version Restricted to Repository staff only Download (4MB) | Request a copy
Preview	PDF (Scopus) - Supplemental Material Download (198kB) | Preview
Preview	PDF (WOS) - Supplemental Material Download (287kB) | Preview

Abstract

MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leak age currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability and overall system efficiency, leading to issues such as increased power loss, thermal stress, and reduced lifespan of devices. This review delves into the mechanisms underlying leakage currents in SiC MOSFETs, a promising technology for high-power applications. The key factors contributing to leakage, such as gate oxide degradation, material properties, and device architecture, have been identified by examining the research conducted over the past few years. Understand ing the leakage current mechanisms is crucial for developing effective mitigation strategies and optimizing SiC MOSFET performance. This review concludes by summarizing key findings and highlighting the importance of ongoing research.

Item Type:	Article (Review)
Additional Information:	4527/125592
Uncontrolled Keywords:	Gate leakage · Junctions · Leakage currents · MOSFET · Silicon carbide (SiC) · Tunneling
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	22 Dec 2025 16:36
Last Modified:	24 Dec 2025 23:14
Queue Number:	2025-12-Q780
URI:	http://irep.iium.edu.my/id/eprint/125592

Actions (login required)

View Item