Radiation-induced degradation of silicon carbide MOSFETs – a review

Baba, Tamana and Siddiqui, Naseeb Ahmed and Saidin, Norazlina and Md Yusoff, Siti Harwani and Abdul Sani, Siti Fairus and Abdul Karim, Julia and Hasbullah, Nurul Fadzlin (2024) Radiation-induced degradation of silicon carbide MOSFETs – a review. Materials Science & Engineering: B, 300. pp. 1-13. ISSN 0921-5107 E-ISSN 1873-4944

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Abstract

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experience radiation-induced charge build-up, leading to degradation and potential failure. This article provides a critical review focusing on the consequences of different types of radiation, including gamma rays, heavy ions, electrons, protons, and neutrons, on SiC MOSFETs. The impact of radiation on crucial parameters of MOSFETs such as threshold voltage, mobility, leakage current, and state resistance are discussed. The review aims to analyze in detail how radiation affects these parameters and the resulting consequences for SiC MOSFET performance. By exploring the effects of various radiation types on SiC MOSFETs, the article contributes to a comprehensive understanding of the challenges associated with radiation-induced degradation in these devices. This understanding is essential for developing strategies to mitigate the detrimental effects of radiation and enhance the reliability and performance of SiC MOSFETs in radiation-prone environments.

Item Type:	Article (Review)
Uncontrolled Keywords:	Radiation, Electron, Neutron, Proton, Heavy Ion, Gamma, Semiconductors, Silicon carbide, MOSFET, Degradation
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	08 Jan 2024 09:26
Last Modified:	08 Jan 2024 09:46
URI:	http://irep.iium.edu.my/id/eprint/109675

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