Direct growth and properties of few-layer MoS2 on multilayer graphene prepared by chemical vapor deposition

Sirat, Mohamad Shukri and Johari, Muhammad Hilmi and Mohmad, Abdul Rahman and Mohammad Haniff, Muhammad Aniq Shazni and Ani, Mohd Hanafi and Mat Hussin, Mohd Rofei and Mohamed, Mohd Ambri (2022) Direct growth and properties of few-layer MoS2 on multilayer graphene prepared by chemical vapor deposition. Journal of Materials Science. ISSN 0022-2461 E-ISSN 1573-4803

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Abstract

The distinctive properties of van der Waals heterostructures that combine two or more two-dimensional materials are of interest due to their potential for highperformance devices. Molybdenum disulfide (MoS2)/graphene has been shown as good photodetectors, sensors and field-effect transistors. However, the progress is restricted due to susceptibility of the single-layer MoS2/graphene to the substrate that affects its properties. Recently, few-layer (FL) MoS2 and multilayer (ML) graphene have shown a fairly good electrical performance. Here, a direct growth of FL MoS2 on the ML graphene approach in chemical vapor deposition is taken to synthesize FL MoS2/ML graphene heterostructure. A comprehensive study on the properties of the FL MoS2/ML graphene heterostructure is conducted. The Raman spectra indicate the presence of typical MoS2 peaks (E12g and A1g modes) and graphene peaks (D, G and 2D bands). The slight graphene-peaks shift is related to the electron transfer from ML graphene to the FL MoS2, deducing a good interfacial interaction between both materials. Referring to the atomic force microscopy images, the thickness of the FL MoS2 and ML graphene is measured around 3 nm and 10 nm, respectively. The X-ray diffraction and transmission electron microscope indicate that the grown FL MoS2 is 3R-phase. Field-effect transistor based on the FL MoS2/ML graphene is fabricated and the estimated carrier mobility is around 1036 cm2 V-1 s-1. Our work highlights the necessity of utilizing FL MoS2/ML graphene for extensive fundamental and application studies.

Item Type:	Article (Journal)
Uncontrolled Keywords:	few layer MoS2, chemical vapor deposition, graphene
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering Kulliyyah of Engineering
Depositing User:	Dr Mohd Hanafi Ani
Date Deposited:	14 Nov 2022 11:44
Last Modified:	14 Nov 2022 11:47
URI:	http://irep.iium.edu.my/id/eprint/101064

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