Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

Mohamed, Mohd Ambri and Lam, Pham Tien and Otsuka, N. (2013) Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers. Journal of Crystal Growth, 378. pp. 329-332. ISSN 0022-0248 (In Press)

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Abstract

A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to a lattice strain which results in elastic interactions among AsGa defects. A change in magnetizations is induced by large lattice distortions during transition of AsGa defects from substitutional sites to interstitial sites. The calculation of electron states of an AsGa atom with a shallow acceptor Be atom show that at the transition, an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom, leading to a magnetization annihilation.

Item Type:	Article (Journal)
Additional Information:	6933/29881
Uncontrolled Keywords:	A1. Doping, A1. Point defects, A3. Molecular beam epitaxy, B2. Semiconducting gallium arsenide
Subjects:	Q Science > QC Physics Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Ambri Mohamed
Date Deposited:	29 Jul 2013 09:49
Last Modified:	29 Jul 2013 09:49
URI:	http://irep.iium.edu.my/id/eprint/29881

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