Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature

Sutjipto, Agus Geter Edy and , Afzeri and Shafie, Amir Akramin (2011) Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature. Applied Mechanics and Materials, 84-85. pp. 317-320. ISSN 1660-9336

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Abstract

Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70oC) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity.

Item Type:	Article (Journal)
Additional Information:	4703/8577
Uncontrolled Keywords:	atomic force microscope, silicon, nanofabrication, silicon dioxide, frozen water
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) > TA401 Materials of engineering and construction
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering
Depositing User:	Dr Agus Geter Edy Sutjipto
Date Deposited:	09 Dec 2011 15:14
Last Modified:	09 Dec 2011 15:14
URI:	http://irep.iium.edu.my/id/eprint/8577

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