Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

Faris Azim Ahmad Fajri, Faris Azim and Ahmad Fakhrurrazi, Ahmad Noorden and Azni, Abdul Aziz (2021) Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor. In: 7th International Conference on the Applications of Science and Mathematics, SCIEMATHIC 2021, 27- 28 October 2021, Virtual.

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Abstract

This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. The energy-band diagram is simulated by initializing the various materials’ properties of Gallium Nitride (GaN) and Gallium Arsenide (GaAs), and solving the Poisson’s equation derived from Maxwell’s equation. The equation is solved by applying the finite difference method (FDM) and using the Newton-Raphson method. Both of these materials are compared with different doping concentrations (1x1013cm-3-1x1017cm-3). Taking the GaAs properties as the controlled variable, the band structure is validated with literature findings. The measured band gap energy of GaN changes from 1.5215eV to 7.6689eV, and GaAs, from 1.1330eV to 5.6431eV. It increases with the proportion to the doping concentration increments. However, when obtaining both of the spatial active regions for GaN and GaAs, it reduce from (1.9990μm-0.0790μm)x1μm2 and from (1.9990μm-0.0890μm)x1μm2 respectively. The findings show the effect of doping concentration on the semiconductor energy-band structure. Thus, the numerical system is expected to be used as the determination of the internal quantum efficiency, and the output spectrum of light-emitting diode (LED) chip.

Item Type:	Conference or Workshop Item (Invited Papers)
Additional Information:	7730/73957
Uncontrolled Keywords:	Doping effect, LED, energy band structure, semiconductor, and active region
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Science Kulliyyah of Science > Department of Physics
Depositing User:	Dr Ahmad Fakhrurrazi Ahmad Noorden
Date Deposited:	02 Jun 2021 11:06
Last Modified:	20 Sep 2022 16:53
URI:	http://irep.iium.edu.my/id/eprint/73957

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