Using MEMS in class D amplifiers for standard GSM carrier

Al-Khateeb, Khalid A. Saeed and M. Harun, Nik M. Yusri (2008) Using MEMS in class D amplifiers for standard GSM carrier. In: International Conference on Computer and Communication Engineering, ICCCE'08, (13 - 15 May 2008) hosted at Kuala Lumpur Malaysia , 13-15 May 2008 , Kuala Lumpur, Malaysia.

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Abstract

The equivalent circuit of MEMS capacitive switches can be used to analyze a class D power amplifier, operated by a power supply of 3.7V. The system is intended for GSM audio frequency to produce an output power of (0.5-1.0) mW at a load output impedance of (8-10) Q. The system gain must be greater than 33 dBm and the estimated loss (0.5-1) dB. A model for the power amplifier using MEMS passive devices has been developed. The model helps to determine the design parameters that affect the performance and reliability of the system that operate an RF transceiver. The optimization of the amplifier and the MEMS capacitor switching devices and how to integrate the system, will also be discussed. The design and the equivalent circuit were simulated using a PSpice model.

Item Type:	Conference or Workshop Item (Full Paper)
Additional Information:	3475/5731
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK5101 Telecommunication. Including telegraphy, radio, radar, television T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Prof. Dr. Khalid A. S. Al-Khateeb
Date Deposited:	09 May 2012 16:10
Last Modified:	09 May 2012 16:10
URI:	http://irep.iium.edu.my/id/eprint/5731

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