Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS

Zakaria, Mohd Hazrul and Bais, Badariah and Ab. Rahim, Rosminazuin and Yeop Majlis, Burhanuddin (2012) Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS. In: 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, 19-21 September 2012, Kuala Lumpur.

PDF - Published Version Restricted to Repository staff only Download (886kB) | Request a copy

Abstract

In this paper, characterization on the geometrical aspects of a single layer, p-doped silicon based piezoresistive microcantilever using finite element method is presented. The displacement and the von Mises stress obtained from the simulation were observed by varying the geometries of the microcantilever namely the thickness, length, width and the distance between the piezoresistor legs. The sensitivity of the microcantilever was then calculated and tabulated. From the simulation results, it can be shown that the displacement and sensitivity of the single layer piezoresistive microcantilever is comparable to the dual layer counterpart with the thinner microcantilever resulted in a maximum displacement and sensitivity, compared to other geometrical factors.

Item Type:	Conference or Workshop Item (Full Paper)
Additional Information:	4269/38793 (eISBN: 978-1-4673-2394-9, ISBN: 978-1-4673-2395-6, DOI: 10.1109/SMElec.2012.6417154)
Uncontrolled Keywords:	single layer, p-doped, piezoresistive microcantilever
Subjects:	T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Rosminazuin Ab Rahim
Date Deposited:	16 Oct 2014 15:06
Last Modified:	16 Oct 2014 15:06
URI:	http://irep.iium.edu.my/id/eprint/38793

Actions (login required)

View Item