Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors

Oo, Myo Min and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohmamed Zin, Mohamed Rawi and Hasbullah, Nurul Fadzlin (2013) Neutron radiation effect on 2N2222 and NTE 123 NPN silicon bipolar junction transistors. IOP Conf. Ser.: Mater. Sci. Eng. 53 , 53. 012013-1. ISSN doi:10.1088/1757-899X/53/1/012013

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Abstract

This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region.

Item Type:	Article (Journal)
Additional Information:	5928/33628
Uncontrolled Keywords:	Neutron radiation, 2N2222, NTE 123 NPN
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK9001 Nuclear engineering. Atomic power
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering
Depositing User:	Dr. Nahrul Khair Alang Md Rashid
Date Deposited:	30 May 2014 09:56
Last Modified:	30 May 2014 09:56
URI:	http://irep.iium.edu.my/id/eprint/33628

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