High photoluminescence intensity of heterostructure AlGaN-based DUV-LED through uniform carrier distribution

Hairol Aman, Mohammad Amirul and Ahmad Fajri, Faris Azim and Ahmad Noorden, Ahmad Fakhrurrazi and Daud, Suzairi and Bahadoran, Mahdi and Abdul Kadir, Muhammad Zamzuri (2023) High photoluminescence intensity of heterostructure AlGaN-based DUV-LED through uniform carrier distribution. Physica Scripta, 98 (1). pp. 1-9. ISSN 0031-8949

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Abstract

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with different Al compositions are compared and analyzed. The radiative recombination of the DUV-LED is less efficient due to the imbalance of carrier distribution. The findings show that the uniform electrons and holes distribution significantly improve the radiative recombination for structure with a thin step-shaped quantum well (QW). The simulated structure emits a wavelength of 302.874 nm, categorized in the ultraviolet-B (UV-B) spectrum. Our results imply that carrier uniformity in QW is required to enhance the light intensity of DUV-LED. Remarkably, the uniformity enhances the PL intensity drastically, at least six times higher than the first structure and twice higher than the second structure.

Item Type:	Article (Journal)
Uncontrolled Keywords:	deep-ultraviolet light-emitting diode, aluminium gallium nitride, uniform carrier distribution, photoluminescence, radiative recombination
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Science Kulliyyah of Science > Department of Physics
Depositing User:	Dr Ahmad Fakhrurrazi Ahmad Noorden
Date Deposited:	05 Dec 2022 09:53
Last Modified:	03 Feb 2024 16:31
URI:	http://irep.iium.edu.my/id/eprint/101616

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