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Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition

Ramlan, Amir Hakimi and Sirat, Mohd Shukri and Ismail, Edhuan and Buys, Yose Fachmi and Purwanto, Hadi and Mohd Mustafah, Yasir and Md Din, Muhammad Faiz and Ani, Mohd Hanafi (2019) Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition. In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur.

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Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the quality of graphene on copper and palladium substrates as a function of various hydrogen concentrations during annealing as well as different annealing times is studied. Copper and palladium substrates are chosen due to their difference in carbon/hydrogen diffusivity and solubility. Raman analysis showed that upon annealing under higher hydrogen concentration, the graphene grown is defective and with multiple layers. On the other hand, prolonged annealing time is detrimental to the quality of both substrates. Empirical-based calculations showed that both substrates experienced an increase in graphene layers as both H2 concentration and annealing time were increased. We postulate that the presence of defects and multilayer graphene are caused by the hydrogen trapping phenomenon inside the substrates’ vacancies and also the activation of potential defects’ sites through hydrogen adsorption. Graphical representations of the relationship between hydrogen concentration and annealing time towards graphene quality were plotted to suggest the optimized parameters in producing pristine graphene.

Item Type: Conference or Workshop Item (Plenary Papers)
Additional Information: 6994/71182
Uncontrolled Keywords: Graphene; chemical vapor deposition; hydrogen; Raman spectroscopy; copper substrates; palladium substrates; annealing
Subjects: T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Kulliyyah of Engineering > Department of Mechatronics Engineering
Depositing User: Dr Mohd Hanafi Ani
Date Deposited: 21 Mar 2019 16:00
Last Modified: 26 Nov 2019 12:06
URI: http://irep.iium.edu.my/id/eprint/71182

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