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Reliability study of silicon carbide Schottky Diode with fast electron irradiation

Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Hasbullah, Nurul Fadzlin and Abdullah, Yusof (2018) Reliability study of silicon carbide Schottky Diode with fast electron irradiation. In: 7th International Conference on Computer and Communication Engineering, ICCCE 2018, 19th-20th September 2018, Kuala Lumpur.

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The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude respectively. The reduction is associated with the significant rise in the series resistance (INFINEON: 1.45 Ω to 121×103 Ω; STMICROELECTRONICS: 1.44 Ω to 2.1 × 109 Ω) due to the irradiation-induced defects. Besides that, the reverse leakage current density in INFINEON increased by one order of magnitude while reverse leakage current density in STMICROELECTRONICS decreased by about one order of magnitude. We have also observed an increase in ideality factor (INFINEON: 1.01 to 1.05; STMICROELECTRONICS: 1.02 to 1.3) and saturation current (INFINEON: 1.6×10-17 A to 2.5×10-17 A; STMICROELECTRONICS: 2.4×10-15 A to 8 × 10-15 A) as a result of electron irradiation. Overall, for particular devices studied, INFINEON have better quality devices and more radiation resistance compared to STMICROELECTRONICS.

Item Type: Conference or Workshop Item (Plenary Papers)
Additional Information: 4269/70791
Uncontrolled Keywords: Silicon carbide , Schottky diode , electron , radiation
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Rosminazuin Ab Rahim
Date Deposited: 18 Feb 2019 15:56
Last Modified: 03 Jul 2019 15:17
URI: http://irep.iium.edu.my/id/eprint/70791

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