About the silicon sensitivity of the deep level with alternating pressure

Tursunov, Ikromjon Gulamovich and Okhunov, Abdurahim and Mamatkarimov, Odiljon Oxundadaevich (2018) About the silicon sensitivity of the deep level with alternating pressure. IIUM Engineering Journal, 19 (2). pp. 164-171. ISSN 1511-788X E-ISSN 2289-7860

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Abstract

This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation after stress relief will occur in the new potential relief.

Item Type:	Article (Journal)
Additional Information:	6825/67747
Uncontrolled Keywords:	semiconductors; properties; dynamic and deep levels
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Science
Depositing User:	Dr. Abdurahim Okhunov
Date Deposited:	04 Dec 2018 10:52
Last Modified:	27 Jan 2019 15:40
URI:	http://irep.iium.edu.my/id/eprint/67747

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