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The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

Ganiyev, Sabuhi and Khairi, Mohammad Azim and Ahmad Fauzi, Dhiyauddin and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2017) The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors, 51 (12). pp. 1666-1670. ISSN 1063-7826

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Abstract

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Φb, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. © 2017, Pleiades Publishing, Ltd.

Item Type: Article (Journal)
Additional Information: 4527/63086
Uncontrolled Keywords: electron irradiation, thermal dependence measurements, 4H-SiC Schottky diode
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK4001 Applications of electric power
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr Nurul Fadzlin Hasbullah
Date Deposited: 25 Apr 2018 16:09
Last Modified: 21 Jun 2018 10:46
URI: http://irep.iium.edu.my/id/eprint/63086

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