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A comparative analysis of the effect of temperature on band-gap energy of gallium nitride and its stability beyond room temperature using a Bose–Einstein model and Varshni'S model

Al Humayun, Md Abdullah and Alam, A. H. M. Zahirul and Khan, Sheroz and Abdul Malek, Mohamed Fareq and Rashid, Mohd Abdur (2017) A comparative analysis of the effect of temperature on band-gap energy of gallium nitride and its stability beyond room temperature using a Bose–Einstein model and Varshni'S model. IIUM Engineering Journal, 18 (2). pp. 151-157. ISSN 1511-788X

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Abstract

High temperature stability of the band-gap energy of the active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy-dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy-dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: the Passler model, the Bose–Einstein model, and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between the Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN, as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95 K both the models show almost same characteristics. However, beyond 95 K Varshni’s model shows weaker temperature dependence than that of the Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300 K is found to be 3.43 eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operation at room temperature. Kestabilan bahan peranti semikonduktor pada suhu tinggi di lapisan aktif jurang tenaga (band-gap) adalah salah satu cabaran penting dalam bidang reka bentuk peranti optoelektronik semikonduktor. Faktor ini bergantung kepada bahan semikonduktor yang digunakan untuk proses fabrikasi peranti elektronik ini samada secara langsung atau tidak langsung, bagi memastikan kestabilan dalam pelbagai jurang lapisan tenaga. Model yang berbeza telah digunakan secara meluas untuk mengkaji kebergantungan ciri jurang lapisan tenaga bahan semikonduktor pada suhu yang berbeza. Kaedah yang paling biasa digunakan untuk menganalisa kebergantungan jurang lapisan tenaga bahan semikonduktor pada suhu adalah: model Passler, model Bose-Einstein dan model Varshni. Sementara itu pada suhu melebihi 95K, model Varshni menunjukkan kebergantungan pada suhu adalah lemah berbanding model Bose-Einstein. Model Varshni menunjukkan bahawa jurang tenaga bagi GaN pada suhu 300 K adalah 3.43 eV, di mana ia adalah tepat dan bersamaan dengan kiraan teori pada jurang lapisan tenaga GaN untuk beroperasi pada suhu bilik.

Item Type: Article (Journal)
Additional Information: 4575/59526
Uncontrolled Keywords: GaN; bandgap energy; temperature; Bose–Einstein model;Varshni’s model
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr AHM Zahirul Alam
Date Deposited: 23 Nov 2017 09:44
Last Modified: 27 Mar 2018 09:41
URI: http://irep.iium.edu.my/id/eprint/59526

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