Review—Critical considerations of high quality graphene synthesized by plasma-enhanced chemical vapor deposition for electronic and energy storage devices

Mohd Abid, Mohd Asyadi Azam and Zulkapli, Nor Najihah and Dorah, Norasimah and Raja Seman, Raja Noor Amalina and Ani, Mohd Hanafi and Sirat, Mohd Shukri and Ismail, Edhuan and Fauzi, Fatin Bazilah and Mohamed, Mohd Ambri and Majlis, Burhanuddin Yeop (2017) Review—Critical considerations of high quality graphene synthesized by plasma-enhanced chemical vapor deposition for electronic and energy storage devices. ECS Journal of Solid State Science and Technology, 6 (6). M3035-M3048. ISSN 2162-8769 E-ISSN 2162-8777

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Abstract

Graphene is a promising electrode material not only due to its intrinsic properties like good electrical conductivity, high mechanical strength and high chemical stability, but also because of its high theoretical surface area of 2630 m2 g−1. In this report, the effect of CVD parameters to the growth of high quality graphene on metal substrates by using plasma enhanced chemical vapor deposition (PECVD) was extensively studied. Interestingly, synthesizing high quality graphene by PECVD technique is not only depending on the CVD parameters, but also depending on the catalysts and its plasma sources. It was found that Ni and Cu are the most favored metal catalysts for PECVD graphene growth. With high solubility of carbon (> 0.1 at. %), Ni effectively promote the growth of multilayer graphene by PECVD. However, large-area synthesis has made relatively inexpensive Cu as one of the most attractive substrates for monolayer graphene growth. Further details on the potential use of different transition metal catalysts in synthesizing graphene and consequently the specific usage of graphene based devices are discussed in this report.

Item Type:	Article (Review)
Additional Information:	4583/54933
Uncontrolled Keywords:	electronic device, energy storage device, graphene, metal substrates, plasma-enhanced CVD
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TA Engineering (General). Civil engineering (General) > TA401 Materials of engineering and construction
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User:	Dr Mohd Hanafi Ani
Date Deposited:	17 Mar 2017 12:11
Last Modified:	14 Jul 2017 12:01
URI:	http://irep.iium.edu.my/id/eprint/54933

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