NEGF-based transport phenomena for semiconduncting CNTFET

Farhana, Soheli and Alam, A H M Zahirul and Khan, Sheroz and Motakabber, S M A (2015) NEGF-based transport phenomena for semiconduncting CNTFET. In: 2015 5th National Symposium on Information Technology: Towards New Smart World (NSITNSW), 17th-19th February 2015, Riyadh, Saudi Arab.

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Abstract

A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA.

Item Type:	Conference or Workshop Item (Plenary Papers)
Additional Information:	4575/53226
Uncontrolled Keywords:	CNTFET; NEGF; transport; semiconductor
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Prof. Dr. AHM Zahirul Alam
Date Deposited:	09 Mar 2017 10:39
Last Modified:	09 Mar 2017 10:39
URI:	http://irep.iium.edu.my/id/eprint/53226

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