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Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass

Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Abdullah, Yusof and Muridan, Norasmahan (2016) Electrical characterization of commercial GaN LEDs subjected to electron radiation with different conveyor speed per pass. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.

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Abstract

Commercially fabricated nitride-based light emitting diodes (LEDs) is of interest due to its attractive material properties of high temperature tolerance and breakdown strength, making it suitable to be used in extreme environment. Hence, our focus is on the electrical characterization of commercial Gallium Nitride (GaN) subjected to 1000kGy and 1500kGy dose of electron radiation with the conveyor speed were adjusted to 100kGy and 50kGy per pass. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of commercial GaN LEDs before and after radiation have been investigated. I-V measurement shows no presence of current and measurement of C-V shows no presence of capacitance after irradiated with both dose level at the conveyor speed of 100kGy per pass, indicating an open circuit problem. However, LEDs that were irradiated with the same amount of dose with a conveyor speed of 50kGy per pass shows an increase in reverse leakage current

Item Type: Conference or Workshop Item (Plenary Papers)
Additional Information: 4527/52428
Uncontrolled Keywords: Nitride; leakage current; capacitance-voltage; electron radiation; light emitting diodes
Subjects: T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr Nurul Fadzlin Hasbullah
Date Deposited: 27 Mar 2017 09:43
Last Modified: 29 Mar 2017 11:21
URI: http://irep.iium.edu.my/id/eprint/52428

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