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Effect of single event upset on 6T and 12T 32NM CMOS SRAMs circuit

Yusop, Nur Syafiqah and Mahmud, Manzar and Nordin, Anis Nurashikin and Hasbullah, Nurul Fadzlin (2016) Effect of single event upset on 6T and 12T 32NM CMOS SRAMs circuit. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu.

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Abstract

Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to store each bit. Over the years, technology scaling of complementary metaloxide semiconductor (CMOS) devices has also resulted in the scaling of SRAM using minimum-size transistors. As transistor sizes scale down towards lower two-digit nanometer dimensions, CMOS circuits become more sensitive to radiations effects. High performances and high-density SRAMs are prone to radiation-induced single event upsets (SEU) which are dominated by secondary ions generated by nuclear collision events in the chip. The SEU generates are a soft error in transistor due to the strike of an ionizing particle. Thus, this paper compares the endurance of 12T SRAM and 6T SRAM circuit on 32nm CMOS technology towards SEU which is caused by the heavy ion impact with different Linear Energy Transfer characteristic (LET). This paper discussed the effect of LET towards drain node of NMOS and PMOS transistor for both 6T and 12T SRAM. The simulation results and analyses show that 6T SRAM circuit is vulnerable to SEU compared to 12T SRAM.

Item Type: Conference or Workshop Item (Plenary Papers)
Additional Information: 3239/51579
Uncontrolled Keywords: SRAM, radiation, Single event Upset (SEU), Linear Energy transfer (LET)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering
Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr. Anis Nurashikin Nordin
Date Deposited: 10 Jan 2017 16:06
Last Modified: 10 Jan 2017 16:18
URI: http://irep.iium.edu.my/id/eprint/51579

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