A study on controllable aluminium doped zinc oxide patterning by chemical etching for MEMS application

Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin and A. Malik, Noreha and Othman, Raihan and Alam, A. H. M. Zahirul and Khan, Sheroz and Mortada, Ossama and Crunteanu, Aurelian and Chatras, Matthieu and Orlianges, Jean Christophe and Blondy, Pierre (2017) A study on controllable aluminium doped zinc oxide patterning by chemical etching for MEMS application. Microsystems Technologies, 23 (9). pp. 3851-3862. ISSN 0946-7076 E-ISSN 1432-1858

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Abstract

This present work reports on the study of controllable aluminium doped zinc oxide (AZO) patterning by chemical etching for MEMS application. The AZO thin film was prepared by RF magnetron sputtering as it is capable of producing uniform thin film at high deposition rates. X-Ray diffraction (XRD) and atomic force microscopy (AFM) characterization were done to characterize AZO thin film. The sputtered AZO thin film shows c-axis (002) orientation, low surface roughness and high crystalline quality. To pattern AZO thin film for MEMS application, wet etching was chosen due to its ease of processing with few controlling parameters. Four etching solutions were used namely: 10 % Nitric acid, 10 % Phosphoric acid, 10 % Acetic acid and Molybdenum etch solutions. For the first time, chemical etching using Molybdenum etch that consist of a mixture of CH3COOH, HNO3 and H3PO4 was characterized and reported. The effect of these acidic solutions on the undercut etching, vertical and lateral etch rate were studied. The etched AZO were characterized by scanning electron microscopy (SEM) and stylus profilometer. The investigations showed that the Molybdenum etch has the lowest undercut etching of 7.11 µm, and is highly effective in terms of lateral and vertical etching with an etch ratio of 1.30. Successful fine patterning of AZO thin films was demonstrated at device level on a surface acoustic wave resonator fabricated in 0.35 μm CMOS technology. The AZO thin film acts as the piezoelectric thin film for acoustic wave generation. Patterning of the AZO thin film is necessary for access to measurement probe pads. The working acoustic resonator showed resonance peak at 1.044 GHz at 45.28 dB insertion loss indicating that the proposed Molybdenum etch method does not adversely affect the device’s operating characteristics

Item Type:	Article (Journal)
Additional Information:	3239/49259
Uncontrolled Keywords:	aluminium doped zinc oxide,MEMS
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr. Anis Nurashikin Nordin
Date Deposited:	01 Mar 2016 16:15
Last Modified:	28 Mar 2018 16:42
URI:	http://irep.iium.edu.my/id/eprint/49259

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